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Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

Mikael Malmkvist (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Eric Lefebvre (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Malin Borg (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Ludovic Desplanque ; Xavier Wallart ; Gilles Dambrine ; Sylvain Bollaert ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE Transactions on Microwave Theory and Techniques (0018-9480). Vol. 56 (2008), 12, p. 2685-2691.
[Artikel, refereegranskad vetenskaplig]

Electrical characterization and modeling of 2 times 50 um gatewidth InAs/AlSb HEMTs with 225 nm gate-length have been performed. The fabricated devices exhibited a transconductance gm of 650 mS/mm, an extrinsic cutoff frequency fT and an extrinsic maximum frequency of oscillation fmax of 120 and 90 GHz, respectively, already at a low VDS of 0.2 V. A minimum noise figure less than 1 dB between 2-18 GHz was achieved at a dc power consumption of only 10 mW/mm. This demonstrates the potential of InAs/AlSb HEMTs for low-power, low-noise applications. To account for the elevated gate-leakage current lG in the narrow-bandgap InAs/AlSb HEMT, the conventional field-effect transistor small-signal model has been extended. The relatively high IG was modeled by shunting both Cgs and Cgd with Rgs and Rgd, respectively. As a result, the small-signal S-parameters were more accurately modeled, especially for frequencies below 10 GHz. Utilizing this modeling approach, excellent agreement was obtained between measured and modeled S-parameters, unilateral power gain U (Mason's gain) and stability factor K.

Nyckelord: HEMT, AlSb, InAs, small-signal model, low power

Denna post skapades 2009-10-08. Senast ändrad 2016-08-16.
CPL Pubid: 99922


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur