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Epitaxial optimization of 130 nm gate-length InGaAs/InAlAs/InP HEMTs for low-noise applications

Mikael Malmkvist (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE Transactions on Electron Devices (0018-9383). Vol. 56 (2009), 1, p. 126-131.
[Artikel, refereegranskad vetenskaplig]

The epitaxial structure of 130-nm gate-length InGaAs/InAlAs/InP high electron mobility transistors (HEMTs)has been studied in order to optimize the device performance when biased under low-noise conditions. Three essential epitaxial parameters have been varied: the In channel content ([In]: 53%, 70%, and 80%), the δ-doping concentration (δ: 3, 5, and 7 × 1E12 cm−2), and the Schottky layer thickness (dSL: 9, 11, and 13 nm). All HEMTs exhibited low gate-leakage current IG below 1 μA/mm at a low-noise bias, except dSL = 9 nm due to a too thin Schottky layer thickness. It was verified that the lowest noise figure NF was achieved when the square root of the drain-to-source current IDS over transconductance gm exhibited a minimum. A clear optimum for both dSL and δ was observed with respect to minimum noise figure NFmin. Increasing [In] only provided a slight reduction in NFmin. In contrast, the RF performance was much more affected by increasing [In]. The lowest NFmin was achieved with a δ doping of 5 × 1E12 cm−2 and a dSL of 11 nm.

Nyckelord: HEMT, InP, low noise

Denna post skapades 2009-10-08. Senast ändrad 2016-08-18.
CPL Pubid: 99920


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur