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High-frequency capacitance of bipolar resonant tunneling diodes

Kristel Fobelets ; Chris Van Hoof ; Jan Genoe ; Jan Stake (Institutionen för mikrovågsteknik) ; Lennart Lundgren (Institutionen för mikrovågsteknik) ; Gustaaf Borghs
Journal of Applied Physics (0021-8979). Vol. 79 (1996), 2, p. 905-910.
[Artikel, refereegranskad vetenskaplig]

The high-frequency characteristics of bipolar resonant tunneling diodes are experimentally investigated at room temperature. The electron accumulation and discharging in these resonant tunneling light-emitting diodes are studied at frequencies up to 35 GHz. The experiments show capacitance peaks due to electron charge disappearing from the quantum well. The measurements are found to be in agreement with our theoretical model for the calculation of the high-frequency characteristics of resonant tunneling devices. The high-frequency characteristics of the bipolar light-emitting resonant tunneling diode are compared to the unipolar resonant tunneling diode and the resonant interband tunneling diode. The comparison shows a similar discharging characteristic of the quantum well, but a different overall variation of the capacitance.

Nyckelord: ALUMINIUM ARSENIDES, CAPACITANCE, FREQUENCY DEPENDENCE, GALLIUM ARSENIDES, LIGHT EMITTING DIODES, QUANTUM WELLS, RESONANCE, TUNNEL DIODES



Denna post skapades 2006-09-19. Senast ändrad 2014-09-02.
CPL Pubid: 9520

 

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Institutioner (Chalmers)

Institutionen för mikrovågsteknik (1900-2003)

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Informations- och kommunikationsteknik
Nanovetenskap och nanoteknik
Halvledarfysik
Elektronisk mät- och apparatteknik

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