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Heterostructure Barrier Varactor Diodes for Frequency Multiplier Applications

Jan Stake (Institutionen för mikrovågsteknik)
Göteborg : Chalmers University of Technology, 1996. ISBN: 91-7197-412-1.
[Licentiatavhandling]

This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Varactor (HBV) diode and its use in frequency multiplier circuits. Different aspects of material structures and frequency multipliers are described. The aim of the work presented is to develop processes to fabricate state of the art HBVs and multipliers in the millimetre and submillimetre wave region. Different III-V material systems for HBVs have been tested. The results of lattice matched and pseudomorphic GaAs/AlGaAs, InGaAs/InAlAs, InAs/AlSb and phosphide containing materials for HBVs are presented. The state of the art material for millimetre and submillimetre wave HBVs is the In0,53GaAs/In0,52AlAs system with a thin AlAs layer (30 Å) in the middle of the barrier. Both simple analytical models and a self-consistent Poisson/Schrödinger approach are used to predict and optimise HBV diodes. The HBVs were evaluated using on-wafer high frequency S-parameter measurements. Finally, an HBV design procedure based on analytical models is proposed.

Nyckelord: Heterostructure Barrier Varactor (HBV), millimetre- and submillimetre wave power source, varactor diode, frequency multiplier, III-V semiconductor



Denna post skapades 2006-09-19. Senast ändrad 2014-09-02.
CPL Pubid: 9519

 

Institutioner (Chalmers)

Institutionen för mikrovågsteknik (1900-2003)

Ämnesområden

Elektroteknik
Elektrofysik

Chalmers infrastruktur

Relaterade publikationer

Inkluderade delarbeten:


An On-Wafer Method for C-V Characterisation of Heterostructure Diodes


Examination

Datum: 1996-12-16
Tid:
Lokal:

Ingår i serie

Report - Department of Microwave Technology, Chalmers University of Technology, Göteborg, Sweden 249L