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The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

Johan Piscator (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Bahman Raeissi (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik)
Applied Physics Letters (0003-6951). Vol. 94 (2009), 21, p. 213507.
[Artikel, refereegranskad vetenskaplig]

Starting from basic statistical properties of interface states, we demonstrate the influence of energy dependent interface state distributions and thermal emission rates including their capture cross sections on measured differential conductance data for Al/HfO2/SiOx/Si structures. Theoretical plots calculated this way reproduce experimental conductance data without correction for lateral surface potential variations. Close to the silicon conduction band edge, we find an energy dependence of the capture cross sections revealing the existence of electron states with capture processes deviating from the multiphonon mechanisms found for the deeper lying states at interfaces between high-k dielectrics and silicon.



Denna post skapades 2009-05-29. Senast ändrad 2013-10-29.
CPL Pubid: 94527

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)

Ämnesområden

Halvledarfysik
Elektroteknik och elektronik

Chalmers infrastruktur