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**Harvard**

Linder, M., Ingvarson, F., Jeppson, K., Grahn, J., Zhang, S. och Östling, M. (2000) *On DC modeling of the base resistance in bipolar transistors*.

** BibTeX **

@article{

Linder2000,

author={Linder, Martin and Ingvarson, Fredrik and Jeppson, Kjell and Grahn, Jan and Zhang, Shi-Li and Östling, Mikael},

title={On DC modeling of the base resistance in bipolar transistors},

journal={Solid-State Electronics},

issn={0038-1101},

volume={44},

issue={8},

pages={1411-1418},

abstract={The total base resistance R-BTot constitutes a crucial parameter in modeling bipolar transistors. The significant physical effects determining R-BTot are current crowding and conductivity modulation in the base, both causing reduction of R-BTot With increasing base current I-B. In this paper, it is shown that the reduction of R-BTot(I-B) With increasing I-B is directly related to the physical effect dominating in the base. A new model for R-BTot(I-B) is presented where a parameter alpha is introduced to account for the contributions of current crowding and conductivity modulation in the base. Theoretically, alpha is equal to 0.5 when conductivity modulation is dominant and close to 1.0 when current crowding is the most significant effect. This was verified by measurements and simulations using a distributed transistor model which accounts for the lateral distribution of the base current and the stored base charge. The model proposed for R-BTot(I-B) is very suitable for compact transistor modeling since it is given in a closed form expression handling both current crowding and conductivity modulation in the base. An accurate extraction procedure of the model parameters is also presented.},

year={2000},

keywords={model, bipolar transistor, base resistance, current crowding, conductivity modulation, distributed model},

}

** RefWorks **

RT Journal Article

SR Electronic

ID 9379

A1 Linder, Martin

A1 Ingvarson, Fredrik

A1 Jeppson, Kjell

A1 Grahn, Jan

A1 Zhang, Shi-Li

A1 Östling, Mikael

T1 On DC modeling of the base resistance in bipolar transistors

YR 2000

JF Solid-State Electronics

SN 0038-1101

VO 44

IS 8

SP 1411

OP 1418

AB The total base resistance R-BTot constitutes a crucial parameter in modeling bipolar transistors. The significant physical effects determining R-BTot are current crowding and conductivity modulation in the base, both causing reduction of R-BTot With increasing base current I-B. In this paper, it is shown that the reduction of R-BTot(I-B) With increasing I-B is directly related to the physical effect dominating in the base. A new model for R-BTot(I-B) is presented where a parameter alpha is introduced to account for the contributions of current crowding and conductivity modulation in the base. Theoretically, alpha is equal to 0.5 when conductivity modulation is dominant and close to 1.0 when current crowding is the most significant effect. This was verified by measurements and simulations using a distributed transistor model which accounts for the lateral distribution of the base current and the stored base charge. The model proposed for R-BTot(I-B) is very suitable for compact transistor modeling since it is given in a closed form expression handling both current crowding and conductivity modulation in the base. An accurate extraction procedure of the model parameters is also presented.

LA eng

DO 10.1016/S0038-1101(00)00075-7

LK http://dx.doi.org/10.1016/S0038-1101(00)00075-7

OL 30