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**Harvard**

Wahlgren, P. (1998) *The Radio Frequency Single-Electron Transistor and the Horizon Picture for Tunneling*. Göteborg : Chalmers University of Technology (Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie, nr: 1460).

** BibTeX **

@book{

Wahlgren1998,

author={Wahlgren, Peter},

title={The Radio Frequency Single-Electron Transistor and the Horizon Picture for Tunneling},

isbn={91-7197-744-9},

abstract={The main part of this thesis concerns the development of a new type of single electron transistor (SET) called the radio frequency single electron transistor (RF-SET). The RF-SET is the most sensitive electrometer demonstrated. Furthermore, it is the most sensitive voltage amplifier for high impedance sources at high frequencies, thanks to a very small input capacitance. A high bandwidth is obtained by measuring the damping of a microwave resonance circuit. The RF-SET can operate at frequencies approaching the 1/(2.pi. RC) intrinsic limit of the SET. Moreover, it is shown that a quantum limited RF-SET can be fabricated with standard techniques and realizable device parameters. The principle of operation, and the optimized choice of parameters are described. Finally, possible future applications for the RF-SET are discussed.<p /> The second part of this thesis shows that the effect of the electromagnetic environment on Coulomb blockade devices can be estimated through a simple horizon model, in which the interaction length is determined by the Heisenberg uncertainty principle. The advantage of this horizon model can be demonstrated in a device with two tunnel junctions in parallel in which a cut-off voltage related to physical dimensions is observed. This model also explains the characteristics of single junctions and single electron transistors. Moreover, it gives a method for determining the capacitance of an SET.<p /> Finally, the shot noise from high impedance arrays of tunnel junctions are measured. As predicted, the array exhibits a shot noise of reduced Schottky value 2eI/N, where N is the number of junctions in the array.},

publisher={Institutionen för experimentell fysik, Chalmers tekniska högskola,},

place={Göteborg},

year={1998},

series={Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie, no: 1460},

}

** RefWorks **

RT Dissertation/Thesis

SR Print

ID 924

A1 Wahlgren, Peter

T1 The Radio Frequency Single-Electron Transistor and the Horizon Picture for Tunneling

YR 1998

SN 91-7197-744-9

AB The main part of this thesis concerns the development of a new type of single electron transistor (SET) called the radio frequency single electron transistor (RF-SET). The RF-SET is the most sensitive electrometer demonstrated. Furthermore, it is the most sensitive voltage amplifier for high impedance sources at high frequencies, thanks to a very small input capacitance. A high bandwidth is obtained by measuring the damping of a microwave resonance circuit. The RF-SET can operate at frequencies approaching the 1/(2.pi. RC) intrinsic limit of the SET. Moreover, it is shown that a quantum limited RF-SET can be fabricated with standard techniques and realizable device parameters. The principle of operation, and the optimized choice of parameters are described. Finally, possible future applications for the RF-SET are discussed.<p /> The second part of this thesis shows that the effect of the electromagnetic environment on Coulomb blockade devices can be estimated through a simple horizon model, in which the interaction length is determined by the Heisenberg uncertainty principle. The advantage of this horizon model can be demonstrated in a device with two tunnel junctions in parallel in which a cut-off voltage related to physical dimensions is observed. This model also explains the characteristics of single junctions and single electron transistors. Moreover, it gives a method for determining the capacitance of an SET.<p /> Finally, the shot noise from high impedance arrays of tunnel junctions are measured. As predicted, the array exhibits a shot noise of reduced Schottky value 2eI/N, where N is the number of junctions in the array.

PB Institutionen för experimentell fysik, Chalmers tekniska högskola,

T3 Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie, no: 1460

LA eng

OL 30