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Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors

Y. Lu ; S. Hall ; L. Z. Tan ; I. Z. Mitrovic ; W.M. Davey ; Bahman Raeissi (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; K. Cherkaoui ; S Monaghan ; P.K. Hurley ; H.D.B. Gottlob ; M.C. Lemme
Journal of Vaccuum Science & Technology B (1071-1023). Vol. 27 (2009), 1, p. 352.
[Artikel, refereegranskad vetenskaplig]

With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor technology, the conventional capacitance-voltage measurement technique exhibits a series of anomalies. In particular, a nonsaturating increase in the accumulation capacitance with reducing measurement frequency is frequently observed, which has not been adequately explained to our knowledge. In this article, the authors provide an explanation for this anomaly and hence set a criterion for the lower bound on measurement frequency. We then present a model which allows the easy extraction of the required parameters and apply it to an experimental set of data.

Denna post skapades 2009-04-09. Senast ändrad 2013-10-29.
CPL Pubid: 92390


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)


Elektroteknik och elektronik

Chalmers infrastruktur