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Characterization Setup for Device Level Dynamic Load Modulation Measurements

Mattias Thorsell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Christian Fager (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum)
International Microwave Symposium Digest, 2009, Boston (2009)
[Konferensbidrag, refereegranskat]

A dynamic load modulation characterization method is presented. The method gives insight into the device operation under dynamic load modulation conditions. The presented method is based on an active injection load-pull system. The load impedance is dynamically controlled to follow an optimum trajectory, resulting in higher efficiency in back-off operation. On-wafer measurements at 2.14 GHz using a LDMOS device are used to demonstrate the method. The measured results show excellent agreement between static characterization and dynamic measurements.

Nyckelord: Load-pull, Load modulation, LDMOS



Denna post skapades 2009-03-23. Senast ändrad 2015-12-17.
CPL Pubid: 91796