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Static Characterization and parameter Extraction in MOS Transistors

Kjell Jeppson (Institutionen för mikroelektronik, Fasta tillståndets elektronik)
Microelectronic Engineering (0167-9317). Vol. 40 (1998), 3-4, p. 181-186.
[Artikel, refereegranskad vetenskaplig]

This paper describes the basic concepts for efficient parameter extraction. The focus is on efficiency in parameter extraction and often analytical manipulation of the model equations can be used to increase efficiency. In particular, extraction of the linear region miniset parameters, and how series resistance and effective geometry can be derived from these parameters, will be discussed. Furthermore, extraction of the saturation and subthreshold region parameters are discussed and the importance of the underlying model is highlighted.



Denna post skapades 2009-01-22. Senast ändrad 2013-05-28.
CPL Pubid: 88740

 

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Institutioner (Chalmers)

Institutionen för mikroelektronik, Fasta tillståndets elektronik (1997-2003)

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur