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Thermal Study of the High-Frequency Noise in GaN HEMTs

Mattias Thorsell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Martin Fagerlind (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Mattias Südow (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Per-Åke Nilsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE Transactions on Microwave Theory and Techniques (0018-9480). Vol. 57 (2009), 1, p. 19-26.
[Artikel, refereegranskad vetenskaplig]

The high-frequency noise performance of the GaN HEMT is studied for temperatures between 297–398 K. The access resistances ${ R}_{ S}$ and ${ R}_{ D}$ have a limiting effect on the noise performance, and in this paper, their temperature dependence is studied in detail for a ${hbox{2}}times {hbox{100}} mu{hbox{m}}$ GaN HEMT. ${ R}_{ S}$ and ${ R}_{ D}$ show an increase of 0.71 and 0.86 %/K, respectively. The self-heating effect due to dissipated power is also studied to allow accurate intrinsic small-signal and noise parameter extraction. The thermal resistance is measured by infrared microscopy. Based on these results, a temperature dependent noise model including self-heating and temperature-dependent access resistances is derived and verified with measurements.

Nyckelord: Gallium nitride (GaN) modeling noise temperature measurement thermal resistance



Denna post skapades 2009-01-16. Senast ändrad 2015-07-28.
CPL Pubid: 88221

 

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