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20 GHz Power Amplifier Design in 130 nm CMOS

Mattias Ferndahl (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; T. Johansson ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
European Microwave Integrated Circuits Conferance p. 254-257. (2008)
[Konferensbidrag, refereegranskat]

Five different 20 GHz power amplifiers in 130 nm CMOS technology have been designed and characterized. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, as well as the combination of two amplifiers using power splitters/combiners. A maximum output power of 63 mW at 20 GHz was achieved. Transistor level characterization using load pull measurements on 1 mm gate width transistors yielded 148 mW output power. These numbers are, to the authors? knowledge, the highest reported for CMOS above 10 GHz. Transistor modeling and layout for power amplifiers are also discussed.



Denna post skapades 2009-01-08. Senast ändrad 2017-03-21.
CPL Pubid: 84092

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektronik

Chalmers infrastruktur