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Oscillators based on monolithically integrated AlN TFBARs

Martin Norling (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Johannes Enlund ; Ilia Katardjiev ; Spartak Gevorgian (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik)
IEEE Transactions on Microwave Theory and Techniques (0018-9480). Vol. 56 (2008), 12, p. 3209-3216.
[Artikel, refereegranskad vetenskaplig]

Oscillators based on AlN thin-film bulk acoustic resonators are designed, fabricated and measured. The circuits are realised as silicon-on-silicon multichip modules where SiGe transistors are flip-chip mounted on a novel carrier substrate which includes monolithically integrated resonators and passive components. The paper describes the development and processing of the carrier substrate and resonators, as well as the development of the oscillator circuits.



Denna post skapades 2008-12-05. Senast ändrad 2008-12-09.
CPL Pubid: 79819

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur