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Evolution of Valence-Band Alignment with Nitrogen Content in GaNAs/GaAs Single Quantum Wells

J Shao ; W Lu ; Mahdad Sadeghi (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; X Lu ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; L Ma ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Applied Physics Letters (0003-6951). Vol. 93 (2008), 3, p. Art. Nr. 031904.
[Artikel, refereegranskad vetenskaplig]

We report on experimental evidence for the transition of valence-band alignment from type I to type II in Ga Nx As1-x GaAs single quantum wells by photoreflectance measurements. The substitutional nitrogen content covers a range of 1.4%-5.9%. The turning point of the type I-type II transition occurs at x4.7%. The experimental observations can be well interpreted by a combination of band anticrossing model and model-solid theory when nonlinear behavior of either the shear deformation potential or the average valence-band energy is taken into account. The effect of dilute nitrogen on the valence-band offset of GaNAsGaAs quantum well structure is hence clarified. © 2008 American Institute of Physics.

Denna post skapades 2008-12-02. Senast ändrad 2016-07-22.
CPL Pubid: 79485


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik


Elektroteknik och elektronik

Chalmers infrastruktur