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A study on integration of molecular devices into CMOS compatible technology

Jonas Berg (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik) ; Mohammad Kabir (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik) ; Per Lundgren (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik) ; Stefan Bengtsson (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik)
Physica Scripta (0031-8949). Vol. T114 (2004), p. 175-180.
[Artikel, refereegranskad vetenskaplig]

One main obstacle for measuring matter at the level of single molecule is the technology to make a bridge between molecules and microscopic structures (electrodes). A method of fabricating vertical silicon based nanogaps for contacting nanoscale elements has been developed and exploited to confront this problem. The developed technique is compatible to existing CMOS fabrication technology, reproducible and the gap size is easy to measure by simple capacitance measurements. Chemical treatment to attach any kind of nanoscale elements into the nanogap is an important issue. In this paper, we address problems related to surface leakage induced from different chemical processes. We have studied the effects of solvents on the surface leakage as well as surface leakage induced by nano components themselves. Surface leakage is a diffusion current process, and a set of parameters describing it has been used to compare the influence from different chemical processes. The study on solvents confirmed no predominant surface leakage induced by the presence of solvents like toluene and chloroform.

Nyckelord: Silicon nanogaps, Surface leakage currents, CMOS, Molecular electronics



Denna post skapades 2007-01-15. Senast ändrad 2015-12-17.
CPL Pubid: 7872

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik (2003-2006)

Ämnesområden

Fysik

Chalmers infrastruktur

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