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Boron at Si/SiO2 interface in SOI wafers and consequences for piezoresistive MEMS devices

Alexandra Nafari (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; David Karlén (Institutionen för mikroteknologi och nanovetenskap) ; Cristina Rusu ; Krister Svensson ; Peter Enoksson (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem)
MicroMechanics Europe 2008 (2008)
[Konferensbidrag, refereegranskat]

BESOI wafers are commonly used for MEMS fabrication and their quality is thus of great importance for the functionality and reliability of the device. It is therefore important to be aware that there is a manufacturing problem with boron impurity at the Si/SiO2 layer in the SOI wafer This impurity is not specified when purchasing the wafer and can alter the background doping up to several μm:s from the BOX, resulting in non-functional piezoresistive devices and unwanted limitation in membrane thickness. In this work we present guidelines on how to detect and counteract this impurity.

Nyckelord: Piezoresistive, MEMS, SOI, Boron impurity

Denna post skapades 2008-11-18. Senast ändrad 2010-09-07.
CPL Pubid: 78314


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Bionanosystem (2007-2015)
Institutionen för mikroteknologi och nanovetenskap



Chalmers infrastruktur