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Schottky barriers on silicon nanowires influenced by charge configuration

Johan Piscator (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik)
Journal of Applied Physics (0021-8979 ). Vol. 104 (2008), 5, p. 054515.
[Artikel, refereegranskad vetenskaplig]

Due to the geometry offered by nanowires, it is possible to introduce electric fields directed from the wire wall toward a Schottky contact positioned on the end surface of a wire. In the present work a simple model demonstrating the effect of charge on the wire walls close to the metal semiconductor interface is presented. This is also compared to measurements on fabricated nanowire devices, showing that additional positive charge close to the interface will lower the effective Schottky barrier height.

Nyckelord: elemental semiconductors, nanowires, Schottky barriers, semiconductor-metal boundaries, silicon



Denna post skapades 2008-09-22.
CPL Pubid: 74257

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)

Ämnesområden

Halvledarfysik

Chalmers infrastruktur