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A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Johan Piscator (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik)
Physica E: Low-dimensional Systems and Nanostructures (13869477). Vol. 40 (2008), 7, p. 2508-2512 .
[Artikel, refereegranskad vetenskaplig]

For nanowires with Schottky barriers on the end surfaces, charges on the walls of the wire are close enough to the metal–semiconductor interface to influence the Schottky barrier. This is similar to an effect in planar structures, where impurities with energy levels below the Fermi level in the bulk of the substrate material will change charge state in the depletion region of a metal–semiconductor structure if the Schottky barrier is high enough to bring the impurity energy level above the Fermi level. The mechanism for barrier modulation is the same in both cases and occurs in nanowires as a result of the wire geometry.

Nyckelord: Silicon nanowires, Doping, Schottky contact, Oxide charge

Denna post skapades 2008-08-25. Senast ändrad 2016-07-01.
CPL Pubid: 73236


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)



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