CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Bahman Raeissi (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Johan Piscator (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik)
Journal of Applied Physics (0021-8979). Vol. 103 (2008), 10, p. Art. no. 104101.
[Artikel, refereegranskad vetenskaplig]

Using a method based on the frequency dependence of capacitance, cross sections for electron capture into energy states at the interlayer/silicon interface have been investigated for HfO2 that is deposited on silicon by reactive sputtering. We find that the capture cross sections are thermally activated and steeply increase with increasing energy depth. Both features can be attributed to the same physical origin, indicating vibronic trap properties, where the capture mechanism is governed by multiphonon processes.

Nyckelord: capacitance, electron traps, elemental semiconductors, hafnium compounds, interface states, phonon-phonon interactions, semiconductor-insulator boundaries, silicon, vibronic states



Denna post skapades 2008-08-25. Senast ändrad 2016-07-25.
CPL Pubid: 73232

 

Läs direkt!


Länk till annan sajt (kan kräva inloggning)


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)

Ämnesområden

Halvledarfysik

Chalmers infrastruktur