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Tunable Solidly Mounted Thin Film Bulk Acoustic Resonators Based on BaxSr1-xTiO3 Films

John Berge (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Andrei Vorobiev (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; William Steichen ; Spartak Gevorgian (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik)
Microwave and Wireless Components Letters, IEEE (1531-1309). Vol. 17 (2007), 9, p. 655-657.
[Artikel, refereegranskad vetenskaplig]

Electrically tunable solidly mounted thin film bulk acoustic resonators based on BaxSr1-xTiO3 films are reported for the first time. The films are acoustically isolated from the silicon substrate by a Bragg reflector stack. Applying DC bias induces piezoelectric effect and an acoustic resonance at approximately 4 GHz. Under 10 V applied DC bias the resonance frequency of the resonators based on Ba0.25Sr0.75TiO3 films is tuned 1.2% to lower frequencies. The Q-factor of these resonators is approximately 120, and the electromechanical coupling coefficient is 0.5%. The resonant frequency of the BaTiO3 based resonators shifts upwards 1.3% under 10 V DC bias, and the -factor is approximately 30, with an electromechanical coupling coefficient of 6.2%.

Denna post skapades 2008-01-30. Senast ändrad 2014-09-02.
CPL Pubid: 67908


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)


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Chalmers infrastruktur

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