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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi (Institutionen för mikroteknologi och nanovetenskap) ; Johan Piscator (Institutionen för mikroteknologi och nanovetenskap) ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap) ; S. Hall ; O Buiu ; M.C. Lemme ; H.D.B. Gottlob ; P.K- Hurley ; K. Cherkaoui ; H.J. Osten
ESSDERC 2007 - 37th European Solid-State Device Research Conference; Munich; Germany; 11 September 2007 through 13 September 2007 p. 283-286. (2007)
[Konferensbidrag, refereegranskat]

Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by MBE and ALD, and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.

Denna post skapades 2008-01-17. Senast ändrad 2017-11-13.
CPL Pubid: 67383


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap


Teknisk fysik

Chalmers infrastruktur