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Suppression of higher order transverse modes and oxide modes in 1.3 µm InGaAs VCSELs by an inverted surface relief

Emma Söderberg (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Peter Modh (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Johan S. Gustavsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Z Zhang ; J Berggren ; M Hammar
IEEE Photonics Technology Letters Vol. 19 (2007), p. 327.
[Artikel, refereegranskad vetenskaplig]

It is shown, by a systematic variation of design parameters, that the use of an inverted surface relief is very effective for suppressing higher order transverse modes in oxide confined 1.3-mum InGaAs vertical-cavity surface-emitting lasers (VCSELs). Single-mode emission is achieved for a large variety of oxide aperture and surface relief diameters, with optimum designs, having a surface relief with a diameter half of that of the oxide aperture, producing 1.1-1.3 mW of single-mode power. It is also shown that the anti-phase layer employed to enable the use of an inverted surface relief is effective for suppressing oxide modes that otherwise appear in oxide confined VCSELs with a large detuning between the gain peak and the cavity resonance

Nyckelord: III-V semiconductors, gallium arsenide, indium compounds, laser modes, semiconductor lasers, surface emitting lasers



Denna post skapades 2008-01-09. Senast ändrad 2016-04-11.
CPL Pubid: 65002

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik

Ämnesområden

Optik
Optisk fysik
Fotonik

Chalmers infrastruktur