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1.58 µm InGaAs quantum well laser on GaAs

Ivar Tångring (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Zonghe Lai (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet) ; H. Q. Ni ; B.P. Wu ; D.H. Wu ; Y.H. Xiong ; S.S. Huang ; Z.C. Niu
Applied Physics Letters Vol. 91 (2007), p. 221101.
[Artikel, refereegranskad vetenskaplig]

We demonstrate the 1.58 µm emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 µm2 broad area laser, a minimum threshold current density of 490 A/cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 µm GaAs-based lasers.

Denna post skapades 2008-01-09. Senast ändrad 2016-04-11.
CPL Pubid: 64998