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Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy

Ivar Tångring (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Zonghe Lai (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet) ; Mahdad Sadeghi (Institutionen för mikroteknologi och nanovetenskap) ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Journal of Crystal Growth (0022-0248). Vol. 301 (2007), p. 971-974.
[Artikel, refereegranskad vetenskaplig]

We demonstrate 1.25–1.29 μm metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) using an alloy-graded buffer layer (GBL). Use of Be in the GBL is effective to reduce surface/interface roughness and improves optical quality. The RMS surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1×1 μm2. Cross-sectional transmission electron microscopy (TEM) images confirm that most dislocations are blocked in the GBL. Ridge waveguide lasers with 4 μm wide ridge were fabricated and characterized. The average threshold current under the pulsed excitation is in 170–200 mA for a cavity length of 0.9–1.5 mm. This value can be further reduced to about 100 mA by high-reflectivity coating. Lasers can work in an ambient temperature up to at least 50 °C.



Denna post skapades 2008-01-09. Senast ändrad 2016-04-11.
CPL Pubid: 64996

 

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