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**Harvard**

Shekhter, R., Gorelik, L., Jonson, M., Galperin, Y. och Vinokur, V. (2006) *Shuttle transport in nanostructures*. : American Scientific Publishers

** BibTeX **

@inbook{

Shekhter2006,

author={Shekhter, Robert I. and Gorelik, Leonid Y. and Jonson, Mats and Galperin, Y.M. and Vinokur, V. M.},

title={Shuttle transport in nanostructures},

booktitle={Handbook of theoretical and computational nanotechnology},

isbn={1-58883-047-0},

pages={vol 5, ch 1, p 1-59},

abstract={The coupling between mechanical deformations and electronic charge transport in nanostructures
and in composite materials with nanoscale components gives rise to a new class of phenomena |
nanoelectromechanical transport | and opens up a new route in nanotechnology. The interplay
between the electronic and mechanical degrees of freedom is especially important in nanocomposites
consisting of materials with very di®erent elastic properties. Mechanical degrees of freedom take
on a primary role in the charge transfer process in many single-electron devices, where transport is
controlled by quantum-mechanical tunnelling and Coulomb interactions, but where tunnel barriers
can be modi¯ed as a result of mechanical motion. A typical system of this kind is a single-electron
transistor (SET) with deformable tunnel barriers, a so called Nano-Electro-Mechanical SET (NEM-
SET). The new kind of electron transport in this and other types of nanodevices is referred to as
"shuttle transport" of electrons, which implies that electrons is transferred between metallic leads
via a movable small-sized cluster. The present review is devoted to the fundamental aspects of
shuttle transport and to a description of major developments in the theoretical and experimental
research in the ¯eld. Prospective applications of this exciting phenomenon that remarkably combines
traditional mechanics of materials with the most advanced e®ects of quantum physics, will also be
touched upon.},

publisher={American Scientific Publishers},

year={2006},

keywords={shuttling, single electron tunneling, mesoscopic superconductivity},

}

** RefWorks **

RT Book, Section

SR Print

ID 63887

A1 Shekhter, Robert I.

A1 Gorelik, Leonid Y.

A1 Jonson, Mats

A1 Galperin, Y.M.

A1 Vinokur, V. M.

T1 Shuttle transport in nanostructures

YR 2006

T2 Handbook of theoretical and computational nanotechnology

SN 1-58883-047-0

SP 511

OP 59

AB The coupling between mechanical deformations and electronic charge transport in nanostructures
and in composite materials with nanoscale components gives rise to a new class of phenomena |
nanoelectromechanical transport | and opens up a new route in nanotechnology. The interplay
between the electronic and mechanical degrees of freedom is especially important in nanocomposites
consisting of materials with very di®erent elastic properties. Mechanical degrees of freedom take
on a primary role in the charge transfer process in many single-electron devices, where transport is
controlled by quantum-mechanical tunnelling and Coulomb interactions, but where tunnel barriers
can be modi¯ed as a result of mechanical motion. A typical system of this kind is a single-electron
transistor (SET) with deformable tunnel barriers, a so called Nano-Electro-Mechanical SET (NEM-
SET). The new kind of electron transport in this and other types of nanodevices is referred to as
"shuttle transport" of electrons, which implies that electrons is transferred between metallic leads
via a movable small-sized cluster. The present review is devoted to the fundamental aspects of
shuttle transport and to a description of major developments in the theoretical and experimental
research in the ¯eld. Prospective applications of this exciting phenomenon that remarkably combines
traditional mechanics of materials with the most advanced e®ects of quantum physics, will also be
touched upon.

PB American Scientific Publishers

LA eng

OL 30