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GaAs single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performance

Kathiravan Krishnamurthi ; Svein M. Nilsen (Institutionen för mikrovågsteknik) ; Robert G. Harrison
IEEE Transactions on Microwave Theory and Techniques (0018-9480). Vol. 42 (1994), 12, p. 2512-2516.
[Artikel, refereegranskad vetenskaplig]

Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barriers. By placing a thin AlAs layer in the center of an Al0.4Ga0.6As barrier, and using In0.2Ga0.8As spacers, one can increase the effective barrier height, thereby achieving SBVs with both high Q and good capacitance-modulation characteristics. Simulation of a 192-GHz tripler using these varactors shows purely reactive multiplication, without the output-power saturation both predicted and observed in triplers using leaky-barrier SBVs.

Nyckelord: SBV, QBV, HBV, varactors

Denna post skapades 2007-12-04. Senast ändrad 2012-02-20.
CPL Pubid: 62443


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