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Complex crater formation on silicon surfaces by low-energy Ar cluster ion implantation

Vladimir Popok (Institutionen för experimentell fysik, Atomfysik) ; Sergei Prasalovich ; Eleanor E B Campbell
Surface Science Vol. 566-568 (2004), p. 1179-1184.
[Artikel, refereegranskad vetenskaplig]

Silicon samples were implanted by small mass-selected Ar cluster and Ar+ monomer ions with energies in the range of 1.5-18.0 keV/ion. Atomic force microscopy (AFM) shows simple and complex crater formation on the Si surface at the collision spots. A typical complex crater is surrounded by a low-height (0.5 nm) rim and it encloses a centre-positioned cone-shaped hillock with height of up to 3.5 nm depending on the implantation conditions. The morphology and dimensions of the craters and hillocks are studied as a function of the cluster size and implantation energy. A model explaining the hillock formation with relation to the thermal-transfer effect and local target melting at the collision spot is proposed.

Nyckelord: Cluster ion implantation, surface morphology, atomic force microscopy

Denna post skapades 2007-11-06. Senast ändrad 2008-12-09.
CPL Pubid: 61240


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Institutionen för experimentell fysik, Atomfysik (1997-2005)
Institutionen för fysik (GU) (GU)


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