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Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts

Yu Cao (Institutionen för material- och tillverkningsteknik, Yt- och mikrostrukturteknik) ; Sergio Alfonso Pérez-García (Institutionen för material- och tillverkningsteknik, Yt- och mikrostrukturteknik) ; Lars Nyborg (Institutionen för material- och tillverkningsteknik, Yt- och mikrostrukturteknik)
Materials Science Forum (0255-5476). Vol. 556-557 (2007), p. 713-716.
[Artikel, refereegranskad vetenskaplig]

This study deals with the interfacial reactions and electrical properties of Ta/4H-SiC contacts. Tantalum thin films (~100 nm) were deposited onto SiC wafer at room temperature by argon ion beam sputtering. The samples were then heated in high vacuum at 650°C, 800°C or 950°C for 30 min. X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the samples. Ohmic contact is formed in the studied samples after annealing at or above 800°C even though considerable amount of metallic Ta still exists. The reaction zone possesses a layered structure of Ta2C/Ta2C+Ta5Si3/SiC. High enough temperature is needed to provide for sufficient interface change to tailor the contact properties.

Nyckelord: Metal contact, Interfacial reaction, Depth profile, I-V Characteristics.



Denna post skapades 2007-11-02. Senast ändrad 2016-02-01.
CPL Pubid: 60955

 

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