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Low ambient temperature CVD growth of carbon nanotubes

Staffan Dittmer (Institutionen för teknisk fysik) ; Oleg Nerushev ; Eleanor E B Campbell
Applied Physics A (0947-8396 ). Vol. 84 (2006), p. 243-246.
[Artikel, refereegranskad vetenskaplig]

We show that good quality single-walled and multi-walled carbon nanotubes can be grown on CMOS-compatible metal electrodes at ambient room temperature using highly localised catalyst heating at nanostructured electrodes. The method is relatively straightforward and allows considerable flexibility in the kinds of devices that can be fabricated as well as allowing CVD nanotube growth to take place in the close vicinity of temperature-sensitive materials and devices.

Nyckelord: carbon nanotubes

Denna post skapades 2007-10-25. Senast ändrad 2008-12-14.
CPL Pubid: 57889


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Institutionen för teknisk fysik (1900-2015)
Institutionen för fysik (GU) (GU)


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Development of a method for highly localized growth of carbon nanotubes