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Development of high power HBV multipliers for millimeter wave applications

Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Tomas Bryllert (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Josip Vukusic (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Arne Øistein Olsen
Proc. of SPIE Vol. 6739 (2007), p. 67390U.
[Konferensbidrag, refereegranskat]

We present a high-power frequency tripler for 110 GHz and a quintupler for 200-210 GHz. The tripler (×3), that is based on a single HBV diode, produces 240 mW of output power with a 3-dB bandwidth of 6%. This is the highest output power ever recorded for an HBV based multiplier irrespective of output frequency. The module features an ultra-compact waveguide block design, and a microstrip matching circuit on high-thermal-conductivity AlN to improve the power handling capability. Furthermore, we present an HBV quintupler (×5) that delivers more than 20 mW at 202 GHz.

Nyckelord: Heterostructure barrier varactors, frequency conversion, frequency multiplier, millimeter wave generation, semiconductor device thermal, terahertz sources

Optics/Photonics in Security and Defence (20 September 2007, Florence, Italy. Volume: Electro-Optical Remote Sensing, Detection, and Photonic Technologies and Their Applications.

Denna post skapades 2007-10-16. Senast ändrad 2014-09-02.
CPL Pubid: 54187


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)


Elektroteknik och elektronik

Chalmers infrastruktur