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Current enhancement with alternating gate voltage in the Coulomb blockade regime of a single wall carbon nanotube

H.Y. Yu ; DongSu Lee ; S.S. Kim ; B. Kim ; SangWook Lee ; J.G. Park ; S.H. Lee ; G.C. McIntosh ; YungWoo Park ; Mohammad Kabir (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik) ; Eleanor E B Campbell ; S. Roth
Applied Physics A (0947-8396). Vol. 79 (2004), p. 1613-1615.
[Artikel, refereegranskad vetenskaplig]

We investigated the current–voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I=nef, more than 1000 electrons are driven to flow across the source–drain channel at VDS=100 mV, 13 MHz of gate voltage (Vp-p=2 V) and T=1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.

Nyckelord: carbon nanotubes



Denna post skapades 2007-10-15. Senast ändrad 2008-12-14.
CPL Pubid: 54097

 

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Institutioner (Chalmers)

Institutionen för fysik (GU) (GU)
Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik (2003-2006)

Ämnesområden

Den kondenserade materiens fysik

Chalmers infrastruktur