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Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate

Hans Hjelmgren (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Joakim Eriksson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Per-Åke Nilsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Mattias Südow (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap)
Solid-State Electronics (0038-1101). Vol. 51 (2007), 8, p. 1144-1152.
[Artikel, refereegranskad vetenskaplig]

DC and small-signal electro-thermal simulations of a 4H-SiC microwave power MESFET on a high purity semi-insulating substrate are compared to measurements. The focus is on the electron transport, substrate traps, and thermal heating. The doping concentrations are described by measured SIMS profiles, and the material parameters are in accordance with published results. Although the simulated MESFET has a p-buffer and a high purity substrate, the simulations show that the density of shallow traps affects the device characteristics. The very good agreement between simulated and measured DC and small-signal characteristics indicates that the models for electron mobility, substrate traps, and heating are the most important to achieve good agreement with measured data.

Nyckelord: Silicon Carbide, Field effect transistor, Simulation, Microwave



Denna post skapades 2007-09-28. Senast ändrad 2015-07-28.
CPL Pubid: 50659