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Thermoelectric- and hot-electron effects in graphene devices

Grigory Skoblin (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Gothenburg : Chalmers University of Technology, 2017. ISBN: 978-91-7597-681-5.

A technology of encapsulation of graphene in Parylene was introduced
as an alternative to encapsulating graphene in hBN. Edge contacts to the
encapsulated graphene in this case showed resistivity down to 14 Ohm um,
which is the lowest reported value so far. The resulting graphene devices
showed a high carrier mobility (up to 30000 cm2/(V s) at 300K), low doping
(down to 10^11 cm2) and were stable in time. Possibility of encapsulating
also CVD graphene for large-scale device fabrication was shown.
This Parylene encapsulation technology was used for fabrication of thermoelectric
graphene devices and radiation detectors. Since the Seebeck coef-
cient in graphene is high, the thermoelectric eects are strong. A dual-gated
design was used to create an intrinsic graphene thermocouple. Due to a weak
coupling between phonons and electrons in graphene, the electrons can have
signicantly higher temperature than the phonons. These devices allowed
for simple measurement of electron temperature in graphene. When coupled
to an antenna, such a device served as a radiation detector. Even under
unoptimized conditions the detectors showed responsivity up to 700 V/W
and noise level down to 18 pW/Hz^0.5. The response time was estimated to
be less than 1.2 ps.

Nyckelord: CVD, thermoelectric effects, Parylene, encapsulation,graphene, bolometer

Denna post skapades 2017-12-22. Senast ändrad 2018-01-08.
CPL Pubid: 500026


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik


Den kondenserade materiens fysik
Annan elektroteknik och elektronik

Chalmers infrastruktur

NFL/Myfab (Nanofabrication Laboratory)

Relaterade publikationer

Inkluderade delarbeten:

A hybrid-type CVD system for graphene growth

Encapsulation of graphene in Parylene

Thermoelectric effects in graphene at high bias current and under microwave irradiation


Datum: 2018-01-26
Tid: 10:00
Lokal: Kollektorn, Kemivägen 9, Chalmers
Opponent: Thomas Mueller, Vienna University of Technology, Austria

Ingår i serie

Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie 4362