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GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 um intersubband absorption

Thomas Aggerstam ; Thorvald Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Petter Holmström ; Peter Jänes ; Xinyu Liu (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Sebastian Lourdudoss ; Lars Thylén
Quantum Sensing and Nanophotonic Devices IV, Manijeh Razeghi; Gail J. Brown, Editors, Vol. 6479 (2007), p. 64791E.
[Konferensbidrag, refereegranskat]

We have used MBE to grow MQW structures on MOVPE GaN/sapphire templates. The MQW devices are intended for high speed intersubband electroabsorption modulator devices operating at 1.55-&mgr;m. The GaN/AlN multiple quantum well material was systematically studied regarding the surface morphology, structural characterization and optical property by atomic force microscopy, X-ray diffraction and Fourier transform infrared spectroscopy, respectively. The intersubband resonance energy was also calculated considering many-body effects in n-type doped structures. The multiple quantum well structure showed superior performance in terms of linewidth when grown on GaN templates as compared on sapphire. GaN quantum well and AlN barriers with a thickness of 3.3 and 4.2 nm respectively resulted in FWHM of the intersubband absorption peak as low as 93 meV at an absorption energy of 700 meV. This is promising for intersubband modulator applications.



Denna post skapades 2007-08-23.
CPL Pubid: 45479

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Halvledarfysik

Chalmers infrastruktur