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Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

Xinyu Liu (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Thomas Aggerstam ; Peter Jänes ; Petter Holmström ; Sebastian Lourdudoss ; Lars Thylén ; Thorvald Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Journal of Crystal Growth (0022-0248). Vol. 301-302 (2007), p. 457.
[Artikel, refereegranskad vetenskaplig]

Ten period GaN/AlN multiple quantum well (MQW) structures were grown by plasma-assisted molecular beam epitaxy (MBE) on sapphire substrates and metal-organic vapour-phase epitaxy (MOVPE)-grown GaN templates. Samples were investigated by high-resolution X-ray diffraction (HR-XRD) and Fourier transform infrared (FT-IR) spectroscopy. Intersubband (IS) absorbances and FWHM of IS absorption peaks indicated that samples grown on the GaN templates had better characteristics, resulting in a FWHM as low as 93 meV at a peak energy of 700 meV.

Nyckelord: A1. High-resolution X-ray diffraction; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides

Denna post skapades 2007-08-23.
CPL Pubid: 45477


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur