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Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN

Xinyu Liu (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; H.F. Liu ; A. Uddin ; Thorvald Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Journal of Crystal Growth (0022-0248). Vol. 300 (2007), 1, p. 114.
[Artikel, refereegranskad vetenskaplig]

Up to 10 monolayers of Al were deposited on Si (1 1 1) surfaces at low (450 °C) and high (640 °C) temperatures before the molecular beam epitaxy growth of GaN. The influence of the Al monolayers on the overall GaN epitaxial layers was investigated by reflection high-energy electron diffraction, atomic force microscopy, high-resolution X-ray diffraction and transmission electron microscopy. At high-temperature deposition, 1.3 monolayer Al gave the smoothest GaN surface and best crystalline quality. At the low temperature, only 0.8 ML provided the same GaN quality.

Nyckelord: A1. Atomic force microscopy; A1. High-resolution X-ray diffraction; A1. Reflection high-energy electron diffraction; A3. Molecular beam epitaxy; B1. Nitrides



Denna post skapades 2007-08-23.
CPL Pubid: 45476

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Halvledarfysik

Chalmers infrastruktur