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Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epiotaxy

Xinyu Liu (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Peter Jänes ; Petter Holmström ; Thomas Aggerstam ; Sebastian Lourdudoss ; Lars Thylén ; Thorvald Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Journal of Crystal Growth (0022-0248). Vol. 300 (2007), 1, p. 79.
[Artikel, refereegranskad vetenskaplig]

GaN layers of 280 nm thick were grown on sapphire, silicon (1 1 1) and GaN template by plasma assisted molecular beam epitaxy. From atomic force microscopy and high-resolution X-ray diffraction, it was found that GaN grown on sapphire and template gave smooth surface (RMS less then 0.5 nm) and very high crystalline quality (FWHM of (0 0 0 2) scan on sapphire only 48 arcsec). However, GaN growth on Si (1 1 1) provided rough surface and poor crystalline quality. The GaN/AlN multiple quantum well structures were grown on sapphire and template. Intersubband absorption spectra from Fourier transform infrared spectroscopy indicated that layers on GaN templates had better performances than on sapphire substrates.

Nyckelord: A1. Atomic force microscopy; A1. High-resolution X-ray diffraction; A1. Reflection high-energy electron diffraction; A3. Molecular beam epitaxy; B1. Nitrides

Denna post skapades 2007-08-23.
CPL Pubid: 45475


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur