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DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx

Jin-Yu Shiu (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; Extern) ; Vincent Desmaris (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Kazuhide Kumakura ; Toshiki Makimoto ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Edward-Yi Chang
Semicronductor Science and Technology Vol. 22 (2007), p. 717-721.
[Artikel, refereegranskad vetenskaplig]

The effects of sputtered and room temperature plasma enhanced chemical vapour deposition (RT-PECVD) SiNx passivation on the dc and microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs)are studied. The pulsed I–V characteristics from a class B quiescent bias point and transient measurements indicate that the sputtered SiNx passivation is more efficient in suppressing lag effects in AlGaN/GaN HEMTs. Dispersion-free sputtered SiNx passivated AlGaN/GaN HEMTs were obtained using this technique. Continuous-wave (CW) measurements without active cooling give a maximum output power density of 6.6 W mm−1 at Vgs=−4 V, Vds = 50 V and a maximum power added efficiency of 51.3% at Vgs=−4 V, Vds = 30 V at 3 GHz on 2 × 50 μm AlGaN/GaN HEMTs on the sapphire substrate, with a gate length of 2 μm and without field-plated gates. To the best of our knowledge, this is the highest level power density reported on the sapphire substrate without field-plate design. The extrinsic cut-off frequency ( ft) and maximum oscillation frequency ( fmax) are 51 GHz and 100 GHz, respectively, on 2 × 50 × 0.15 μm HEMTs. To our knowledge, the sputtered SiNx passivation for AlGaN/GaN HEMTs is a unique technique, which has never been published before.

Denna post skapades 2007-08-06. Senast ändrad 2017-03-21.
CPL Pubid: 44681