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Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Jin-Yu Shiu (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; Extern) ; Jui-Chien Huang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; Extern) ; Vincent Desmaris (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Chia-Ta chang ; Chung-Yu Lu ; Kazuhide Kumakura ; Toshiki Makimoto ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Edward-Yi Chang
IEEE Electron Device Letters Vol. 28 (2007), 6, p. 476-478.
[Artikel, refereegranskad vetenskaplig]

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = −4 V and Vds = 50 V and a maximum power added efficiency of 51.5% at Vgs = −4 V and Vds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.



Denna post skapades 2007-08-06. Senast ändrad 2017-03-21.
CPL Pubid: 44680