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0.24 W F-Band Heterostructure Barrier Varactor Frequency Tripler

Josip Vukusic (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Tomas Bryllert (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Mahdad Sadeghi (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet) ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik)
WOCSDICE 2007 p. 419-422. (2007)
[Konferensbidrag, refereegranskat]

We have designed, grown, fabricated and characterized a 111 GHz frequency tripler. An AlAs/InAlAs/InGaAs heterostructure barrier varactor (HBV) was used as the nonlinear device for generating higher order harmonics. Four mesas were connected which amounted to a total of twelve barriers in series. This multiplier design was optimized for high output power using an aluminium nitride substrate for improved heat dispersion. The tripler consisted of an HBV device flip-chip soldered onto the AlN microstrip circuit and mounted in a waveguide block. No movable tuners were used for the characterization of the tripler. We measured a maximum output power of 0.24 W with a 6% bandwidth and 20% conversion efficiency. These state-of-the-art results constitute a marked improvement of HBV-based multiplier performance.

Nyckelord: HBV, heterostructure barrier varactor, frequency multiplier, high-power operation, millimetre wave devices, semiconductor devices, terahertz source



Denna post skapades 2007-05-21. Senast ändrad 2014-09-02.
CPL Pubid: 41869

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)
Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet

Ämnesområden

Elektroteknik och elektronik
Elektronik

Chalmers infrastruktur