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Navigation aids in the search for future high-k dielectrics: physical and electrical trends

Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik) ; Bahman Raeissi (Institutionen för mikroteknologi och nanovetenskap) ; Steve Hall ; Octavian Buiu ; Max Lemme ; Heiner Gottlob ; Paul Hurley ; Karim Cherkaoui
Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006). p. 115-118. (2006)
[Artikel, refereegranskad vetenskaplig]

From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.

Nyckelord: High-k Dielectric, Dielectric Constant, Physical Properties of Dielectrics

Denna post skapades 2007-01-17. Senast ändrad 2007-05-16.
CPL Pubid: 25790


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fasta tillståndets elektronik (2003-2006)
Institutionen för mikroteknologi och nanovetenskap



Chalmers infrastruktur