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Proximity effect correction for 20nm dimension patterning

Dai Tsunoda ; Masahiro Shoji ; Mitsuko Tatsugawa ; Hiroyuki Tsunoe ; Yusuke Iino ; Piotr Jedrasik (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet)
Proceedings of SPIE: Alternative Lithographic Technologies; San Jose, CA; United States; 24 February 2009 through 26 February 2009 (0277786X). Vol. 7271 (2009),
[Konferensbidrag, refereegranskat]

Electron Beam Direct Writing (EBDW) has been applied to various applications such as prototyping or small amount production of electronic devices. Originally, proximity effect in EBDW is considered as the problem of the background energy difference caused by the pattern density distribution. However, the critical dimensions of target patterns are getting smaller, we cannot ignore influences of the forward scattering. Theoretically, when the critical dimension is close to 3 or 4 times of forward scattering range, influence cannot be ignored. For example, in case ofthat corresponds, fabricating 20 nm dimension patterns by Nano Imprint Lithography (NIL) which is significant candidate of next generation lithography technology. Because it requires original dimension (1:1) mold. Therefore proximity effect correction (PEC) system which considers the forward scattering must be important. We developed simulation-based proximity effect correction system combined with data format conversion, works on Linux PC cluster. And we exposed the patterns which are dose compensated by this system. Firstly, we have speculated parameters about backward scattering parameters by exposing 100 nm line and space patterns. We got following parameters, beta (backward scattering range) = 32 urn, eta (backward scattering coefficient) = 2.5. Secondary, we have exposed Line and Space patterns whose dimensions are from 20 nm to 100 nm. We found that smaller and dense patterns have trend to be over exposed and bigger. Experimental specification is following, EB Direct Writing system is JBX-9300FS (lOOkeV ace. Voltage) by JEOL co.ltd, (Japan) , resist is HSQ (FOx 12) by Dow Coming co. (United States), substrate is Si.

Denna post skapades 2017-12-27.
CPL Pubid: 254097


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet



Chalmers infrastruktur