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Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy

C. M. Krammel ; M. Roy ; J. Tilley ; P. A. Maksym ; L. Y. Zhang ; P. Wang ; K. Wang ; Y. Y. Li ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; P. M. Koenraad
Physical Review Materials (2475-9953). Vol. 1 (2017), 3, p. Article Number: 034606 .
[Artikel, refereegranskad vetenskaplig]

We show the potential of cross-sectional scanning tunneling microscopy to address structural properties of dilute III-V bismides by investigating Bi: InP. Bismuth atoms down to the second monolayer below the {110} InP surfaces, which give rise to three classes of distinct contrast, are identified with the help of density functional theory calculations. Based on this classification, the pair-correlation function is used to quantify the ordering of Bi atoms on the long range. In a complementary short-ranged study, we investigate the Bi ordering at the atomic level. An enhanced tendency for the formation of first-nearest-neighbor Bi pairs is found. In addition, the formation of small Bi clusters is observed whose geometries appear to be related to strong first-nearest-neighbor Bi pairing. We also identify growth related crystal defects, such as In vacancies, P antisites, and Bi antisites.

Nyckelord: arsenic antisite defects, molecular-beam epitaxy, iii-v semiconductors, 110 surfaces, growth, gaas, spectroscopy, gaas1-xbix, bulk, gap, en cj, 1988, journal of vacuum science & technology a-vacuum surfaces and films, v6



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Denna post skapades 2017-12-27.
CPL Pubid: 254092

 

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