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The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering

M. Wiesner ; A. Trzaskowska ; B. Mroz ; Sophie Charpentier (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; S. Wang ; Yuxin Song (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Floriana Lombardi (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; P. Lucignano ; G. Benedek ; D. Campi ; M. Bernasconi ; F. Guinea ; A. Tagliacozzo
Scientific Reports (20452322). Vol. 7 (2017), 1,
[Artikel, refereegranskad vetenskaplig]

It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.



Denna post skapades 2017-12-15. Senast ändrad 2018-01-08.
CPL Pubid: 253813

 

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