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S-band discrete and MMIC GaN power amplifiers

Joakim Nilsson ; Niklas Billström ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Paolo Romanini
European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009 p. 495-498. (2009)
[Konferensbidrag, refereegranskat]

The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 ?m GaN HEMT process supplied and processed by Chalmers.

Denna post skapades 2017-12-01.
CPL Pubid: 253467


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur