CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Metamorphic HEMT technology for low-noise applications

A. Leuther ; A. Tessmann ; I. Kallfass ; R. Lösch ; M. Seelmann-Eggebert ; Niklas Wadefalk (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; F. Schafer ; J.D.G. Puyol ; M. Schlechtweg ; M. Mikulla ; O. Ambacher
IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009; Newport Beach, CA; United States; 10 May 2009 through 14 May 2009 (1092-8669). p. 188-191. (2009)
[Konferensbidrag, refereegranskat]

Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented. These mHEMT technology feature an extrinsic f T of 220 / 375 GHz and an extrinsic transconduction g m , max , of 1300 / 1800 mS/mm. By using the 50 nm technology several low-noise amplifier MMICs were realized. A small signal gain of 21 dB and a noise figure of 1.9 dB was measured in the frequency range between 80 and 100 GHz at ambient temperature. To investigate the low temperature behaviour of the 100 nm technology, single 4 * 40 μm mHEMTs were integrated in hybrid 4 - 8 GHz (Chalmers) and 16 - 26 GHz (Yebes) amplifiers. At cryogenic temperatures noise temperatures of 3 K at 5 GHz and 12 K at 22 GHz were achieved.



Denna post skapades 2017-11-22.
CPL Pubid: 253309

 

Läs direkt!


Länk till annan sajt (kan kräva inloggning)


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur