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Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy

Z. P. Zhang ; Y. X. Song ; Q. M. Chen ; X. Y. Wu ; Z. Y. S. Zhu ; L. Y. Zhang ; Y. Y. Li ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Journal of Physics D: Applied Physics (0022-3727). Vol. 50 (2017), 46,
[Artikel, refereegranskad vetenskaplig]

Growth mode of tensile-strained Ge quantum dots on different III-V buffers by molecular beam epitaxy is studied by a combination of reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy. The Ge-QDs growth on the InAlAs buffer lattice matched to InP and on InAs buffer on GaSb follows the Volmer-Weber growth mode with round Ge QDs and no Ge wetting layer, while it obeys the Stranski-Krastanov growth mode on GaSb, AlSb and AlGaSb on GaSb substrates, showing rectangular shaped platelets and a clear Ge wetting layer. The discovery of the Volmer-Weber growth mode is essential to avoid forming a wetting layer and the subsequent antiphase-domain defects when capping III-Vs on Ge-QDs, important for potential optoelectronic applications.

Nyckelord: germanium, tensile-strained, growth mode, quantum dots

Denna post skapades 2017-11-15.
CPL Pubid: 253159


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Institutionen för mikroteknologi och nanovetenskap, Fotonik



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