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Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of Al

Rabia Y. Khosa ; Einar Sveinbjӧrnsson ; Michael Winters (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Jawad Ul Hassan ; Robin Karhu ; Erik Janzén ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Materials Science Forum. 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016; Halkidiki; Greece; 25-29 September 2016 (02555476). Vol. 897 MSF (2017), p. 135-138.
[Konferensbidrag, refereegranskat]

We report on a very low density (<5×1011 cm-2) of near-interface traps (NITs) at the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MOS capacitors. The aluminum oxide (Al2O3) is grown by repeated deposition and subsequent low temperature (200 °C) oxidation for 5 min of thin (1-2 nm) Al layers using a hot plate. We refer to this simple method as hot plate Al2O3. It is observed that the density of NITs is significantly lower in the hot plate Al2O3 samples than in samples with Al2O3 grown by atomic layer deposition (ALD) at 300 °C and in reference samples with thermally grown silicon dioxide grown in O2 or N2O ambient. © 2017 Trans Tech Publications, Switzerland.

Nyckelord: Aluminum oxide; Gate dielectrics; Interface states; Near-interface traps

Denna post skapades 2017-10-04.
CPL Pubid: 252333


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Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur