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Electrically pumped GaAsBi laser diodes

Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Xiaoyan Wu ; Juanjuan Liu ; Wenwu Pan ; Chunfang Cao ; Liyao Zhang ; yuxin song ; Yaoyao Li
19th International Conference on Transparent Optical Networks, Girona, Spain, July 2-6, 2017 (invited talk) (2162-7339). (2017)
[Konferensbidrag, refereegranskat]

In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 μm at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm-1. The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77 - 350 K, much smaller than 0.35 - 0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.

Denna post skapades 2017-10-04. Senast ändrad 2017-10-27.
CPL Pubid: 252277


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik


Elektroteknik och elektronik

Chalmers infrastruktur