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GeSn/Ge dual-nanowire heterostructure

Zhongyunshen Zhu ; yuxin song ; Yi Han ; Yaoyao Li ; Zhenpu Zhang ; Liyao Zhang ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott ResortSan Juan; Puerto Rico; 10 July 2017 through 12 July 2017 p. 71-72. (2017)
[Konferensbidrag, refereegranskat]

A dual-nanowire heterostructure with a GeSn layer laterally laying on Ge nanowires is demonstrated by MBE. The strain field analyzed by FEM shows that the novel proposal can significantly release the compressive strain in GeSn for potential direct bandgap conversion as a Si-based light source.

Nyckelord: direct bandgap; dual-nanowire heterostructure; FEM; GeSn; light source; MBE; strain

Denna post skapades 2017-10-02.
CPL Pubid: 252203


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